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| SG12N06P, SG12N06DP Discrete IGBTs Dimensions TO-220AB E C G G=Gate, C=Collector, E=Emitter Dim. A B C D E F G H J K M N Q R Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 SG12N06P Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA o SG12N06DP Test Conditions Maximum Ratings 600 600 20 30 24 12 48 ICM=24 @ 0.8 VCES 100 -55...+150 150 -55...+150 Unit V V TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms o A A W o VGE=15V; TVJ=125oC; RG=33 (RBSOA) Clamped inductive load, L=300uH PC TC=25oC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 C 300 0.45/4 0.55/5 4 o C Nm/Ib.in. g (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.8VCES; VGE=0V; TJ=25 C TJ=125 C o o Characteristic Values min. 600 2.5 5.0 200 1.5 100 2.1 typ. max. Unit V V uA mA nA V VCE=0V; VGE=20V IC=IC90; VGE=15V SG12N06P, SG12N06DP Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min. gts IC=IC90; VCE=10V Pulse test, t Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK Inductive load, TJ=25 C IC=IC90; VGE=15V; L=300uH VCE=0.8VCES; RG=Roff=18 Remarks:Switching times may increase for VCE(Clamp) 0.8VCES' higher TJ or increased RG Inductive load, TJ=25 C IC=IC90; VGE=15V; L=300uH VCE=0.8VCES; RG=Roff=18 Remarks:Switching times may increase for VCE(Clamp) increased RG IGBT 0.25 0.8VCES' higher TJ or o o Unit typ. 11 max. S 5 2% 300us, duty cycle 860 VCE=25V; VGE=0V; f=1MHz 100 15 32 IC=IC90; VGE=15V; VCE=0.5VCES 10 10 20 20 150 120 0.5 20 20 0.15 200 200 0.8 1.25 250 270 0.8 ns ns ns ns mJ ns ns mJ ns ns mJ K/W K/W nC pF Reverse Diode (FRED) Symbol Test Conditions o (TJ=25oC, unless otherwise specified) Characteristic Values min. typ. 1.3 2.5 2 35 1.6 2.5 A ns K/W max. V Unit VF IF=15A; TVJ=150 C TVJ=25 C o IRM trr RthJC VR=100V; IF=25A; -diF/dt=100A/us L 0.05uH; TVJ=100oC IF=1A; -di/dt=50A/us; VR=30V; TJ=25oC Diode |
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